Hauptseite > Publikationsdatenbank > Silicon-germanium nanostructures with quantum dots : formation mechanisms and electrical properties > print

001     40708
005     20180210122452.0
024 7 _ |2 WOS
|a WOS:000090017000001
024 7 _ |2 ISSN
|a 1090-6479
037 _ _ |a PreJuSER-40708
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Pchelyakov, O. P.
|0 P:(DE-HGF)0
|b 0
245 _ _ |a Silicon-germanium nanostructures with quantum dots : formation mechanisms and electrical properties
260 _ _ |c 2000
|a Berlin
|b Springer Science + Business Media
300 _ _ |a 1229
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a article
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440 _ 0 |a Semiconductors
|x 1063-7826
|0 5470
|v 34
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The generally accepted notions about the formation mechanisms for germanium islands with nanometer-scale sizes in a Ge-on-Si system are reviewed on the basis of analysis of recent publications. The presence of elastic strains in the epilayers and in the three-dimensional Ge islands on Si is a key factor that not only initiates a morphological transition from a planar film to an island-containing film (the Stranski-Krastanov mechanism) but also influences the subsequent stages of the islands' evolution, including their shape, size, and spatial distribution. In many cases, this factor modifies appreciably the classical mechanisms of phase-formation and their sequence up to the quasi-equilibrium coexistence of three-dimensional Ge nanoislands at the surface of the Si substrate. The methods for improving the degree of the ordering of nanoislands to attain the smallest possible sizes and large density of areal distribution of these islands are discussed. The published data on optical absorption in the multilayered Ge-Si systems with quantum dots are considered; these data are indicative of an anomalously large cross section of intraband absorption, which makes this class of nanostructures promising for the development of photodetectors of the infrared region of the spectrum. The results of original studies of electrical and optical properties of heterostructures that involve Ge quantum dots and are synthesized by molecular-beam epitaxy on the Si substrates are reported. (C) 2000 MAIK "Nauka/ Interperiodica".
536 _ _ |a Struktur und Dynamik von Grenzflächen
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
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700 1 _ |a Bolkhovityanov, Y. B.
|0 P:(DE-HGF)0
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700 1 _ |a Dvurechenskii, A. V.
|0 P:(DE-HGF)0
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700 1 _ |a Sokolov, A. P.
|0 P:(DE-HGF)0
|b 3
700 1 _ |a Nikiforov, A. I.
|0 P:(DE-HGF)0
|b 4
700 1 _ |a Yakimov, A. I.
|0 P:(DE-HGF)0
|b 5
700 1 _ |a Voigtländer, B.
|0 P:(DE-Juel1)VDB5601
|b 6
|u FZJ
773 _ _ |0 PERI:(DE-600)1473824-7
|g Vol. 34, p. 1229
|p 1229
|q 34<1229
|t Semiconductors
|v 34
|x 1063-7826
|y 2000
909 C O |o oai:juser.fz-juelich.de:40708
|p VDB
913 1 _ |k 29.25.0
|v Struktur und Dynamik von Grenzflächen
|l Grenzflächen- und Vakuumforschung
|b Struktur der Materie und Materialforschung
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914 1 _ |y 2001
915 _ _ |a JCR/ISI refereed
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|b Web of Science Core Collection
915 _ _ |a DBCoverage
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|b Thomson Reuters Master Journal List
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
|g ISG
|0 I:(DE-Juel1)VDB43
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980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-3-20110106

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