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000040809 084__ $$2WoS$$aNanoscience & Nanotechnology
000040809 084__ $$2WoS$$aOptics
000040809 084__ $$2WoS$$aPhysics, Applied
000040809 1001_ $$0P:(DE-Juel1)132261$$aSchuller, B.$$b0$$uFZJ
000040809 245__ $$aModification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation
000040809 260__ $$a[S.l.] @$$bElsevier$$c2001
000040809 300__ $$a219 - 225
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000040809 520__ $$aSemiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon as well as in silicon containing a cavity layer prepared by a hydrogen implant and subsequent rapid thermal annealing. The samples were characterised by photoluminescence, Raman spectroscopy and cross section transmission electron microscopy. We find no significant shifts of the FeSi2 Raman lines, indicating that the iron disilicide precipitates are in the same strain state in all our samples. Furthermore, comparing the 246 cm(-1) FeSi2 Raman line from precipitates and from a buried polycrystalline layer, we conclude that most of the FeSi2 precipitates are unstrained. Consequently, the variation of the photoluminescence in differently prepared samples cannot be due to strain effects in the silicide precipitates. (C) 2001 Elsevier Science B.V. All rights reserved.
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000040809 65320 $$2Author$$asilicide precipitates
000040809 65320 $$2Author$$astrain
000040809 65320 $$2Author$$aphotoluminescence
000040809 7001_ $$0P:(DE-Juel1)VDB4964$$aCarius, R.$$b1$$uFZJ
000040809 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b2$$uFZJ
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000040809 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x0
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