TY  - JOUR
AU  - Schuller, B.
AU  - Carius, R.
AU  - Mantl, S.
TI  - Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation
JO  - Microelectronic engineering
VL  - 55
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - PreJuSER-40809
SP  - 219 - 225
PY  - 2001
N1  - Record converted from VDB: 12.11.2012
AB  - Semiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon as well as in silicon containing a cavity layer prepared by a hydrogen implant and subsequent rapid thermal annealing. The samples were characterised by photoluminescence, Raman spectroscopy and cross section transmission electron microscopy. We find no significant shifts of the FeSi2 Raman lines, indicating that the iron disilicide precipitates are in the same strain state in all our samples. Furthermore, comparing the 246 cm(-1) FeSi2 Raman line from precipitates and from a buried polycrystalline layer, we conclude that most of the FeSi2 precipitates are unstrained. Consequently, the variation of the photoluminescence in differently prepared samples cannot be due to strain effects in the silicide precipitates. (C) 2001 Elsevier Science B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000167815800031
DO  - DOI:10.1016/S0167-9317(00)00451-2
UR  - https://juser.fz-juelich.de/record/40809
ER  -