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@ARTICLE{Schuller:40809,
      author       = {Schuller, B. and Carius, R. and Mantl, S.},
      title        = {{M}odification of beta-{F}e{S}i2 precipitate layers in
                      silicon by hydrogen implantation},
      journal      = {Microelectronic engineering},
      volume       = {55},
      issn         = {0167-9317},
      address      = {[S.l.] @},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-40809},
      pages        = {219 - 225},
      year         = {2001},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Semiconducting iron disilicide precipitates have been
                      fabricated by ion beam synthesis in silicon as well as in
                      silicon containing a cavity layer prepared by a hydrogen
                      implant and subsequent rapid thermal annealing. The samples
                      were characterised by photoluminescence, Raman spectroscopy
                      and cross section transmission electron microscopy. We find
                      no significant shifts of the FeSi2 Raman lines, indicating
                      that the iron disilicide precipitates are in the same strain
                      state in all our samples. Furthermore, comparing the 246
                      cm(-1) FeSi2 Raman line from precipitates and from a buried
                      polycrystalline layer, we conclude that most of the FeSi2
                      precipitates are unstrained. Consequently, the variation of
                      the photoluminescence in differently prepared samples cannot
                      be due to strain effects in the silicide precipitates. (C)
                      2001 Elsevier Science B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IPV / ISG-1},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB46 / I:(DE-Juel1)VDB41},
      pnm          = {Grundlagen und Technologie von Dünnschichtsolarzellen /
                      Ionentechnik},
      pid          = {G:(DE-Juel1)FUEK70 / G:(DE-Juel1)FUEK67},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
                      Nanotechnology / Optics / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000167815800031},
      doi          = {10.1016/S0167-9317(00)00451-2},
      url          = {https://juser.fz-juelich.de/record/40809},
}