Hauptseite > Publikationsdatenbank > Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation > print

001     40809
005     20240708133737.0
024 7 _ |2 DOI
|a 10.1016/S0167-9317(00)00451-2
024 7 _ |2 WOS
|a WOS:000167815800031
037 _ _ |a PreJuSER-40809
041 _ _ |a eng
082 _ _ |a 620
084 _ _ |2 WoS
|a Engineering, Electrical & Electronic
084 _ _ |2 WoS
|a Nanoscience & Nanotechnology
084 _ _ |2 WoS
|a Optics
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Schuller, B.
|0 P:(DE-Juel1)132261
|b 0
|u FZJ
245 _ _ |a Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation
260 _ _ |a [S.l.] @
|b Elsevier
|c 2001
300 _ _ |a 219 - 225
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
|2 DRIVER
440 _ 0 |a Microelectronic Engineering
|x 0167-9317
|0 4347
|v 55
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Semiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon as well as in silicon containing a cavity layer prepared by a hydrogen implant and subsequent rapid thermal annealing. The samples were characterised by photoluminescence, Raman spectroscopy and cross section transmission electron microscopy. We find no significant shifts of the FeSi2 Raman lines, indicating that the iron disilicide precipitates are in the same strain state in all our samples. Furthermore, comparing the 246 cm(-1) FeSi2 Raman line from precipitates and from a buried polycrystalline layer, we conclude that most of the FeSi2 precipitates are unstrained. Consequently, the variation of the photoluminescence in differently prepared samples cannot be due to strain effects in the silicide precipitates. (C) 2001 Elsevier Science B.V. All rights reserved.
536 _ _ |a Grundlagen und Technologie von Dünnschichtsolarzellen
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536 _ _ |a Ionentechnik
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a silicide precipitates
653 2 0 |2 Author
|a strain
653 2 0 |2 Author
|a photoluminescence
700 1 _ |a Carius, R.
|0 P:(DE-Juel1)VDB4964
|b 1
|u FZJ
700 1 _ |a Mantl, S.
|0 P:(DE-Juel1)VDB4959
|b 2
|u FZJ
773 _ _ |a 10.1016/S0167-9317(00)00451-2
|g Vol. 55, p. 219 - 225
|p 219 - 225
|q 55<219 - 225
|0 PERI:(DE-600)1497065-x
|t Microelectronic engineering
|v 55
|y 2001
|x 0167-9317
909 C O |o oai:juser.fz-juelich.de:40809
|p VDB
913 1 _ |k 30.90.0
|v Grundlagen und Technologie von Dünnschichtsolarzellen
|l Energieumwandlungstechniken
|b Energietechnik
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913 1 _ |k 29.87.0
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|l Grundlagenforschung zur Informationstechnik
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914 1 _ |y 2001
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IPV
|l Institut für Photovoltaik
|d 31.12.2006
|g IPV
|0 I:(DE-Juel1)VDB46
|x 0
920 1 _ |k ISG-1
|l Institut für Halbleiterschichten und Bauelemente
|d 31.12.2006
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980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)IMD-3-20101013
981 _ _ |a I:(DE-Juel1)IEK-5-20101013
981 _ _ |a I:(DE-Juel1)PGI-9-20110106

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