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@ARTICLE{Plonka:41138,
      author       = {Plonka, R. and Dittmann, R. and Pertsev, N. A. and Vasco,
                      E. and Waser, R.},
      title        = {{I}mpact of the top-electrode material on the permittivity
                      of single-crystalline {B}a0.7{S}r0.3{T}i{O}3 thin films},
      journal      = {Applied physics letters},
      volume       = {86},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-41138},
      pages        = {202908},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We observed significant influence of the top-electrode
                      material on the thickness and temperature dependences of the
                      dielectric response of single-crystalline Ba0.7Sr0.3TiO3
                      thin-film capacitors. For SrRuO3/Ba0.7Sr0.3TiO3/SrRuO3
                      samples, the position of dielectric maximum shifts to lower
                      temperatures with decreasing film thickness, whereas the
                      samples with Pt top electrodes exhibit an opposite trend.
                      Moreover, the apparent "interfacial" capacitance, extracted
                      from the film-thickness dependence of dielectric response,
                      is very different for these two types of samples and
                      strongly depends on temperature. Experimental results are
                      analyzed theoretically in light of the depolarizing-field
                      and strain effects on the transition temperature and
                      permittivity of ferroelectric films. (c) 2005 American
                      Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {CNI / IFF-IEM},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB321},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000229398000072},
      doi          = {10.1063/1.1931063},
      url          = {https://juser.fz-juelich.de/record/41138},
}