% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Schneider:41449,
      author       = {Schneider, St. and Jolly, T. W. and Kohlstedt, H. and
                      Waser, R.},
      title        = {{U}se of reactive gases with broad-beam radio frequency ion
                      sources for industrial applications},
      journal      = {Journal of vacuum science $\&$ technology / A},
      volume       = {22},
      issn         = {0734-2101},
      address      = {New York, NY},
      publisher    = {Inst.},
      reportid     = {PreJuSER-41449},
      pages        = {1493 - 1499},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Broad-beam ion sources are used for a number of important
                      industrial etching and deposition applications, and the use
                      of inductively coupled plasmas has greatly increased the
                      feasibility of using beams of reactive gases, especially of
                      chlorine and oxygen, but also of CO, CO2, CF4, CHF3, SF6,
                      etc. In order to gain more understanding of the factors that
                      affect the composition of beams of these gases, we have used
                      a Hiden energy-dispersive quadrupole mass spectrometer to
                      analyze the flux of ions and energetic particles produced by
                      an Oxford Instruments 15 cm rf ion source. For all of the
                      above gases, we have analyzed the effects of changing the
                      operating conditions on the composition of the ion beam, and
                      the fractional production of multiply charged ions; on the
                      plasma potential (and the consequential divergence of the
                      ion beam) and on the spread in energy of the ion beam. We
                      discuss how these factors influence the correct use of the
                      ion source in etching applications with these gases. It is
                      important that the design of the ion source should be
                      optimized for the process gases that are used. The source
                      was originally optimized for use on argon. We discuss the
                      effect of the design on the source's performance with the
                      different gases, and we consider whether design changes
                      would be appropriate for optimum performance on different
                      gases. (C) 2004 American Vacuum Society.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Materials Science, Coatings $\&$ Films / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000223322000070},
      doi          = {10.1116/1.1692396},
      url          = {https://juser.fz-juelich.de/record/41449},
}