%0 Journal Article
%A Nagarajan, V.
%A Prasertchoung, S.
%A Zhao, T.
%A Zheng, H.
%A Ouyang, J.
%A Ramesh, R.
%A Tian, W.
%A Pan, X. Q.
%A Kim, D. M.
%A Eom, C. B.
%A Kohlstedt, H.
%A Waser, R.
%T Size effects in ultrathin epitaxial ferroelectric heterostructures
%J Applied physics letters
%V 84
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-41462
%D 2004
%Z Record converted from VDB: 12.11.2012
%X In this letter we report on the effect of thickness scaling in model PbZr0.2Ti0.8O3(PZT)/SrRuO3 heterostructures. Although theoretical models for thickness scaling have been widely reported, direct quantitative experimental data for ultrathin perovskite (<10 nm) films in the presence of real electrodes have still not been reported. In this letter we show a systematic quantitative experimental study of the thickness dependence of switched polarization in (001) epitaxial PZT films, 4 to 80 nm thick. A preliminary model based on a modified Landau Ginzburg approach suggests that the nature of the electrostatics at the ferroelectric-electrode interface plays a significant role in the scaling of ferroelectric thin films. (C) 2004 American Institute of Physics.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000222111800053
%R 10.1063/1.1765742
%U https://juser.fz-juelich.de/record/41462