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000041462 0247_ $$2DOI$$a10.1063/1.1765742
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000041462 084__ $$2WoS$$aPhysics, Applied
000041462 1001_ $$0P:(DE-Juel1)VDB22096$$aNagarajan, V.$$b0$$uFZJ
000041462 245__ $$aSize effects in ultrathin epitaxial ferroelectric heterostructures
000041462 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2004
000041462 300__ $$a
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000041462 440_0 $$0562$$aApplied Physics Letters$$v84$$x0003-6951$$y5225
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000041462 520__ $$aIn this letter we report on the effect of thickness scaling in model PbZr0.2Ti0.8O3(PZT)/SrRuO3 heterostructures. Although theoretical models for thickness scaling have been widely reported, direct quantitative experimental data for ultrathin perovskite (<10 nm) films in the presence of real electrodes have still not been reported. In this letter we show a systematic quantitative experimental study of the thickness dependence of switched polarization in (001) epitaxial PZT films, 4 to 80 nm thick. A preliminary model based on a modified Landau Ginzburg approach suggests that the nature of the electrostatics at the ferroelectric-electrode interface plays a significant role in the scaling of ferroelectric thin films. (C) 2004 American Institute of Physics.
000041462 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000041462 7001_ $$0P:(DE-HGF)0$$aPrasertchoung, S.$$b1
000041462 7001_ $$0P:(DE-HGF)0$$aZhao, T.$$b2
000041462 7001_ $$0P:(DE-HGF)0$$aZheng, H.$$b3
000041462 7001_ $$0P:(DE-HGF)0$$aOuyang, J.$$b4
000041462 7001_ $$0P:(DE-HGF)0$$aRamesh, R.$$b5
000041462 7001_ $$0P:(DE-HGF)0$$aTian, W.$$b6
000041462 7001_ $$0P:(DE-HGF)0$$aPan, X. Q.$$b7
000041462 7001_ $$0P:(DE-HGF)0$$aKim, D. M.$$b8
000041462 7001_ $$0P:(DE-HGF)0$$aEom, C. B.$$b9
000041462 7001_ $$0P:(DE-Juel1)VDB3107$$aKohlstedt, H.$$b10$$uFZJ
000041462 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b11$$uFZJ
000041462 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.1765742$$gVol. 84$$q84$$tApplied physics letters$$v84$$x0003-6951$$y2004
000041462 8567_ $$uhttp://hdl.handle.net/2128/995$$uhttp://dx.doi.org/10.1063/1.1765742
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