TY  - JOUR
AU  - Nagarajan, V.
AU  - Prasertchoung, S.
AU  - Zhao, T.
AU  - Zheng, H.
AU  - Ouyang, J.
AU  - Ramesh, R.
AU  - Tian, W.
AU  - Pan, X. Q.
AU  - Kim, D. M.
AU  - Eom, C. B.
AU  - Kohlstedt, H.
AU  - Waser, R.
TI  - Size effects in ultrathin epitaxial ferroelectric heterostructures
JO  - Applied physics letters
VL  - 84
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-41462
PY  - 2004
N1  - Record converted from VDB: 12.11.2012
AB  - In this letter we report on the effect of thickness scaling in model PbZr0.2Ti0.8O3(PZT)/SrRuO3 heterostructures. Although theoretical models for thickness scaling have been widely reported, direct quantitative experimental data for ultrathin perovskite (<10 nm) films in the presence of real electrodes have still not been reported. In this letter we show a systematic quantitative experimental study of the thickness dependence of switched polarization in (001) epitaxial PZT films, 4 to 80 nm thick. A preliminary model based on a modified Landau Ginzburg approach suggests that the nature of the electrostatics at the ferroelectric-electrode interface plays a significant role in the scaling of ferroelectric thin films. (C) 2004 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000222111800053
DO  - DOI:10.1063/1.1765742
UR  - https://juser.fz-juelich.de/record/41462
ER  -