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@ARTICLE{Nagarajan:41462,
      author       = {Nagarajan, V. and Prasertchoung, S. and Zhao, T. and Zheng,
                      H. and Ouyang, J. and Ramesh, R. and Tian, W. and Pan, X. Q.
                      and Kim, D. M. and Eom, C. B. and Kohlstedt, H. and Waser,
                      R.},
      title        = {{S}ize effects in ultrathin epitaxial ferroelectric
                      heterostructures},
      journal      = {Applied physics letters},
      volume       = {84},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-41462},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {In this letter we report on the effect of thickness scaling
                      in model PbZr0.2Ti0.8O3(PZT)/SrRuO3 heterostructures.
                      Although theoretical models for thickness scaling have been
                      widely reported, direct quantitative experimental data for
                      ultrathin perovskite (<10 nm) films in the presence of real
                      electrodes have still not been reported. In this letter we
                      show a systematic quantitative experimental study of the
                      thickness dependence of switched polarization in (001)
                      epitaxial PZT films, 4 to 80 nm thick. A preliminary model
                      based on a modified Landau Ginzburg approach suggests that
                      the nature of the electrostatics at the
                      ferroelectric-electrode interface plays a significant role
                      in the scaling of ferroelectric thin films. (C) 2004
                      American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000222111800053},
      doi          = {10.1063/1.1765742},
      url          = {https://juser.fz-juelich.de/record/41462},
}