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@ARTICLE{Schwartz:43113,
author = {Schwartz, R. W. and Schneller, T. and Waser, R.},
title = {{C}hemical solution deposition of electronic oxide films},
journal = {Comptes rendus chimie},
volume = {7},
issn = {1631-0748},
address = {Paris},
publisher = {Elsevier},
reportid = {PreJuSER-43113},
pages = {433},
year = {2004},
note = {Record converted from VDB: 12.11.2012},
abstract = {The chemical solution deposition (CSD) technique as a
highly flexible method for the fabrication of electronic
oxide thin films is reviewed. Various chemical aspects of
different approaches are discussed, including sol-gel,
hybrid, and metallo-organic decomposition (MOD) routes,
which all have been successfully applied for the deposition
of this class of materials. Principles of the selection and
properties of the educts, the mechanism of film
crystallization, and tailoring of microstructure through
manipulation of deposition parameters are reported. The role
of thermodynamics on the phase transformation process is
also reviewed. Finally, some of the applications for
chemical solution-derived thin films currently under
development are illustrated, and recent advances, such as
the deposition of less than 100-nm-thick films, lateral
nanostructuring, and the formation of single nano-sized
grains are considered. (C) 2004 Academie des sciences.
Published by Elsevier SAS. All rights reserved.},
keywords = {J (WoSType)},
cin = {IFF-IEM},
ddc = {540},
cid = {I:(DE-Juel1)VDB321},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Chemistry, Multidisciplinary},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000222224500002},
doi = {10.1016/j.crci.2004.01.007},
url = {https://juser.fz-juelich.de/record/43113},
}