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@ARTICLE{Ellerkmann:43466,
      author       = {Ellerkmann, U. and Liedtke, R. and Böttger, U. and Waser,
                      R.},
      title        = {{I}nterface related thickness dependence of the tunability
                      in {B}a{S}r{T}i{O}3 thin films},
      journal      = {Applied physics letters},
      volume       = {85},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-43466},
      pages        = {4708 - 4710},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The thickness dependence of the tunability of
                      Ba0.7Sr0.3TiO3 thin films is investigated. The
                      capacitance-voltage curves, revealing the tunability of the
                      films with thickness from 30 to 370 nm, show a strong
                      thickness dependence. This is attributed to a
                      bias-independent interface capacity. The interface
                      suppresses the permittivity of the film with increasing
                      influence for decreasing film thickness, whereas the
                      tunability of the bulk of the film remains constant.
                      Calculations are performed from a thermodynamic model based
                      on the Landau-Ginzburg-Devonshire theory leading to the
                      assumption of the bias-independent interface capacity. The
                      bias dependence of the bulk of the films derived from
                      measurement data are in very good agreement with the
                      theoretically derived values. (C) 2004 American Institute of
                      Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000225166400050},
      doi          = {10.1063/1.1824173},
      url          = {https://juser.fz-juelich.de/record/43466},
}