%0 Journal Article
%A Zheng, X.
%A Xu, Y.
%A Sobolewski, R.
%A Adam, R.
%A Mikulics, V. V.
%A Siegel, M.
%A Kordos, P.
%T Femtosecond Response of a Free-standing LT-GaAs Photoconductive Switch
%J Applied optics
%V 42
%@ 0003-6935
%C Washington, DC
%I Optical Soc. of America
%M PreJuSER-43837
%P 1726 - 1731
%D 2003
%Z Record converted from VDB: 12.11.2012
%X We present a novel, free-standing low-temperature GaAs (LT-GaAs) photoconductive switch and demonstrate its femtosecond performance. A 1-mum-thick layer of a single-crystal LT-GaAs was patterned into 5-10-mum-wide and 15-30-mum-long bars, separated from their GaAs substrate and, subsequently, placed across gold coplanar transmission lines deposited on a Si substrate, forming a photoconductive switch. The switch was excited with 110-fs-wide optical pulses, and its photoresponse was measured with an electro-optic sampling system. Using 810-nm optical radiation, we recorded an electrical transient as short as 360 fs (1.25 THz, 3-dB bandwidth) and established that the photo-carrier lifetime in our LT-GaAs was 150 fs. Our free-standing devices exhibited quantum efficiency of the order of similar to7%, and their photoresponse amplitude was a linear function of the applied voltage bias, as well as a linear function of the excitation power, below a well-defined saturation threshold. (C) 2003 Optical Society of America.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000181708400019
%R 10.1364/AO.42.001726
%U https://juser.fz-juelich.de/record/43837