TY  - JOUR
AU  - Zheng, X.
AU  - Xu, Y.
AU  - Sobolewski, R.
AU  - Adam, R.
AU  - Mikulics, V. V.
AU  - Siegel, M.
AU  - Kordos, P.
TI  - Femtosecond Response of a Free-standing LT-GaAs Photoconductive Switch
JO  - Applied optics
VL  - 42
SN  - 0003-6935
CY  - Washington, DC
PB  - Optical Soc. of America
M1  - PreJuSER-43837
SP  - 1726 - 1731
PY  - 2003
N1  - Record converted from VDB: 12.11.2012
AB  - We present a novel, free-standing low-temperature GaAs (LT-GaAs) photoconductive switch and demonstrate its femtosecond performance. A 1-mum-thick layer of a single-crystal LT-GaAs was patterned into 5-10-mum-wide and 15-30-mum-long bars, separated from their GaAs substrate and, subsequently, placed across gold coplanar transmission lines deposited on a Si substrate, forming a photoconductive switch. The switch was excited with 110-fs-wide optical pulses, and its photoresponse was measured with an electro-optic sampling system. Using 810-nm optical radiation, we recorded an electrical transient as short as 360 fs (1.25 THz, 3-dB bandwidth) and established that the photo-carrier lifetime in our LT-GaAs was 150 fs. Our free-standing devices exhibited quantum efficiency of the order of similar to7%, and their photoresponse amplitude was a linear function of the applied voltage bias, as well as a linear function of the excitation power, below a well-defined saturation threshold. (C) 2003 Optical Society of America.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000181708400019
DO  - DOI:10.1364/AO.42.001726
UR  - https://juser.fz-juelich.de/record/43837
ER  -