% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Zheng:43837,
      author       = {Zheng, X. and Xu, Y. and Sobolewski, R. and Adam, R. and
                      Mikulics, V. V. and Siegel, M. and Kordos, P.},
      title        = {{F}emtosecond {R}esponse of a {F}ree-standing {LT}-{G}a{A}s
                      {P}hotoconductive {S}witch},
      journal      = {Applied optics},
      volume       = {42},
      issn         = {0003-6935},
      address      = {Washington, DC},
      publisher    = {Optical Soc. of America},
      reportid     = {PreJuSER-43837},
      pages        = {1726 - 1731},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We present a novel, free-standing low-temperature GaAs
                      (LT-GaAs) photoconductive switch and demonstrate its
                      femtosecond performance. A 1-mum-thick layer of a
                      single-crystal LT-GaAs was patterned into 5-10-mum-wide and
                      15-30-mum-long bars, separated from their GaAs substrate
                      and, subsequently, placed across gold coplanar transmission
                      lines deposited on a Si substrate, forming a photoconductive
                      switch. The switch was excited with 110-fs-wide optical
                      pulses, and its photoresponse was measured with an
                      electro-optic sampling system. Using 810-nm optical
                      radiation, we recorded an electrical transient as short as
                      360 fs (1.25 THz, 3-dB bandwidth) and established that the
                      photo-carrier lifetime in our LT-GaAs was 150 fs. Our
                      free-standing devices exhibited quantum efficiency of the
                      order of similar $to7\%,$ and their photoresponse amplitude
                      was a linear function of the applied voltage bias, as well
                      as a linear function of the excitation power, below a
                      well-defined saturation threshold. (C) 2003 Optical Society
                      of America.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK242},
      shelfmark    = {Optics},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000181708400019},
      doi          = {10.1364/AO.42.001726},
      url          = {https://juser.fz-juelich.de/record/43837},
}