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| Hauptseite > Publikationsdatenbank > Femtosecond Response of a Free-standing LT-GaAs Photoconductive Switch > print |
| Hauptseite > Publikationsdatenbank > Femtosecond Response of a Free-standing LT-GaAs Photoconductive Switch > print |
| 001 | 43837 | ||
| 005 | 20180210133433.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1364/AO.42.001726 |
| 024 | 7 | _ | |2 WOS |a WOS:000181708400019 |
| 037 | _ | _ | |a PreJuSER-43837 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Optics |
| 100 | 1 | _ | |a Zheng, X. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Femtosecond Response of a Free-standing LT-GaAs Photoconductive Switch |
| 260 | _ | _ | |a Washington, DC |b Optical Soc. of America |c 2003 |
| 300 | _ | _ | |a 1726 - 1731 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Applied Optics |x 0003-6935 |0 9361 |v 42 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a We present a novel, free-standing low-temperature GaAs (LT-GaAs) photoconductive switch and demonstrate its femtosecond performance. A 1-mum-thick layer of a single-crystal LT-GaAs was patterned into 5-10-mum-wide and 15-30-mum-long bars, separated from their GaAs substrate and, subsequently, placed across gold coplanar transmission lines deposited on a Si substrate, forming a photoconductive switch. The switch was excited with 110-fs-wide optical pulses, and its photoresponse was measured with an electro-optic sampling system. Using 810-nm optical radiation, we recorded an electrical transient as short as 360 fs (1.25 THz, 3-dB bandwidth) and established that the photo-carrier lifetime in our LT-GaAs was 150 fs. Our free-standing devices exhibited quantum efficiency of the order of similar to7%, and their photoresponse amplitude was a linear function of the applied voltage bias, as well as a linear function of the excitation power, below a well-defined saturation threshold. (C) 2003 Optical Society of America. |
| 536 | _ | _ | |a Kondensierte Materie |c M02 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK242 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Xu, Y. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Sobolewski, R. |b 2 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Adam, R. |b 3 |u FZJ |0 P:(DE-Juel1)VDB5644 |
| 700 | 1 | _ | |a Mikulics, V. V. |b 4 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Siegel, M. |b 5 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Kordos, P. |b 6 |u FZJ |0 P:(DE-Juel1)VDB5426 |
| 773 | _ | _ | |a 10.1364/AO.42.001726 |g Vol. 42, p. 1726 - 1731 |p 1726 - 1731 |q 42<1726 - 1731 |0 PERI:(DE-600)1474462-4 |t Applied optics |v 42 |y 2003 |x 0003-6935 |
| 909 | C | O | |o oai:juser.fz-juelich.de:43837 |p VDB |
| 913 | 1 | _ | |k M02 |v Kondensierte Materie |l Kondensierte Materie |b Materie |0 G:(DE-Juel1)FUEK242 |x 0 |
| 914 | 1 | _ | |y 2003 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k ISG-3 |l Institut für Grenzflächen und Vakuumtechnologien |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB43 |x 0 |
| 970 | _ | _ | |a VDB:(DE-Juel1)61628 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
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