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000043844 0247_ $$2DOI$$a10.1016/j.susc.2004.06.194
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000043844 084__ $$2WoS$$aChemistry, Physical
000043844 084__ $$2WoS$$aPhysics, Condensed Matter
000043844 1001_ $$0P:(DE-Juel1)VDB1226$$aPaul, N.$$b0$$uFZJ
000043844 245__ $$aComparison between Surfactant-mediated Bi/Ge/Si(111) Epitaxy and Ge/Si(111) Epitaxy
000043844 260__ $$aAmsterdam$$bElsevier$$c2004
000043844 300__ $$a187 - 200
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000043844 520__ $$aUsing scanning tunneling microscopy (STM) the Ge epitaxy on a Bi terminated Si(I 11) surface is compared to the growth without surfactant. During the growth of the Ge wetting layer in surfactant mediated epitaxy (SME), Si and Ge can be distinguished by different apparent heights in the STM images due to the Bi termination of the surface. As soon as the two bilayer high wetting layer is completed, Ge islands with a flat top and an underlying dislocation network occur. Elastic distortions due to the dislocation network result in periodic sub-angstrom height undulations measured by the STM. In this case the Ge islands have the form of a mesa. With increasing Ge coverage, these mesas spread laterally. Beyond a Ge coverage of 10 bilayers, the Ge mesas have coalesced and further Ge deposition leads to a 2D layer-by-layer growth of Ge on Si(I 11). In epitaxy without the use of a surfactant as well, the formation of Ge islands with an underlying dislocation network is observed. However, in this case the Ge islands are much higher and show no tendency to coalesce. The partially relaxed islands coexist with another type of tall islands. (C) 2004 Elsevier B.V. All rights reserved.
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000043844 650_7 $$2WoSType$$aJ
000043844 65320 $$2Author$$ascanning tunneling microscopy
000043844 65320 $$2Author$$agrowth
000043844 65320 $$2Author$$amolecular beam epitaxy
000043844 65320 $$2Author$$abismuth
000043844 65320 $$2Author$$asilicon
000043844 65320 $$2Author$$agermanium
000043844 7001_ $$0P:(DE-Juel1)VDB32659$$aAsaoka, H.$$b1$$uFZJ
000043844 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b2$$uFZJ
000043844 773__ $$0PERI:(DE-600)1479030-0$$a10.1016/j.susc.2004.06.194$$gVol. 564, p. 187 - 200$$p187 - 200$$q564<187 - 200$$tSurface science$$v564$$x0039-6028$$y2004
000043844 8567_ $$uhttp://dx.doi.org/10.1016/j.susc.2004.06.194
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000043844 9141_ $$y2004
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000043844 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
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