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@ARTICLE{Paul:43844,
      author       = {Paul, N. and Asaoka, H. and Voigtländer, B.},
      title        = {{C}omparison between {S}urfactant-mediated
                      {B}i/{G}e/{S}i(111) {E}pitaxy and {G}e/{S}i(111) {E}pitaxy},
      journal      = {Surface science},
      volume       = {564},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-43844},
      pages        = {187 - 200},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Using scanning tunneling microscopy (STM) the Ge epitaxy on
                      a Bi terminated Si(I 11) surface is compared to the growth
                      without surfactant. During the growth of the Ge wetting
                      layer in surfactant mediated epitaxy (SME), Si and Ge can be
                      distinguished by different apparent heights in the STM
                      images due to the Bi termination of the surface. As soon as
                      the two bilayer high wetting layer is completed, Ge islands
                      with a flat top and an underlying dislocation network occur.
                      Elastic distortions due to the dislocation network result in
                      periodic sub-angstrom height undulations measured by the
                      STM. In this case the Ge islands have the form of a mesa.
                      With increasing Ge coverage, these mesas spread laterally.
                      Beyond a Ge coverage of 10 bilayers, the Ge mesas have
                      coalesced and further Ge deposition leads to a 2D
                      layer-by-layer growth of Ge on Si(I 11). In epitaxy without
                      the use of a surfactant as well, the formation of Ge islands
                      with an underlying dislocation network is observed. However,
                      in this case the Ge islands are much higher and show no
                      tendency to coalesce. The partially relaxed islands coexist
                      with another type of tall islands. (C) 2004 Elsevier B.V.
                      All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000223388100023},
      doi          = {10.1016/j.susc.2004.06.194},
      url          = {https://juser.fz-juelich.de/record/43844},
}