Hauptseite > Publikationsdatenbank > Comparison between Surfactant-mediated Bi/Ge/Si(111) Epitaxy and Ge/Si(111) Epitaxy > print

001     43844
005     20180210135648.0
024 7 _ |2 DOI
|a 10.1016/j.susc.2004.06.194
024 7 _ |2 WOS
|a WOS:000223388100023
037 _ _ |a PreJuSER-43844
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Chemistry, Physical
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Paul, N.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB1226
245 _ _ |a Comparison between Surfactant-mediated Bi/Ge/Si(111) Epitaxy and Ge/Si(111) Epitaxy
260 _ _ |a Amsterdam
|b Elsevier
|c 2004
300 _ _ |a 187 - 200
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Surface Science
|x 0039-6028
|0 5673
|v 564
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Using scanning tunneling microscopy (STM) the Ge epitaxy on a Bi terminated Si(I 11) surface is compared to the growth without surfactant. During the growth of the Ge wetting layer in surfactant mediated epitaxy (SME), Si and Ge can be distinguished by different apparent heights in the STM images due to the Bi termination of the surface. As soon as the two bilayer high wetting layer is completed, Ge islands with a flat top and an underlying dislocation network occur. Elastic distortions due to the dislocation network result in periodic sub-angstrom height undulations measured by the STM. In this case the Ge islands have the form of a mesa. With increasing Ge coverage, these mesas spread laterally. Beyond a Ge coverage of 10 bilayers, the Ge mesas have coalesced and further Ge deposition leads to a 2D layer-by-layer growth of Ge on Si(I 11). In epitaxy without the use of a surfactant as well, the formation of Ge islands with an underlying dislocation network is observed. However, in this case the Ge islands are much higher and show no tendency to coalesce. The partially relaxed islands coexist with another type of tall islands. (C) 2004 Elsevier B.V. All rights reserved.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK252
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a scanning tunneling microscopy
653 2 0 |2 Author
|a growth
653 2 0 |2 Author
|a molecular beam epitaxy
653 2 0 |2 Author
|a bismuth
653 2 0 |2 Author
|a silicon
653 2 0 |2 Author
|a germanium
700 1 _ |a Asaoka, H.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB32659
700 1 _ |a Voigtländer, B.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB5601
773 _ _ |a 10.1016/j.susc.2004.06.194
|g Vol. 564, p. 187 - 200
|p 187 - 200
|q 564<187 - 200
|0 PERI:(DE-600)1479030-0
|t Surface science
|v 564
|y 2004
|x 0039-6028
856 7 _ |u http://dx.doi.org/10.1016/j.susc.2004.06.194
909 C O |o oai:juser.fz-juelich.de:43844
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |y 2004
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
|g ISG
|0 I:(DE-Juel1)VDB43
|x 0
970 _ _ |a VDB:(DE-Juel1)61649
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-3-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-3-20110106

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