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000043846 0247_ $$2DOI$$a10.1016/j.tsf.2004.06.118
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000043846 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000043846 084__ $$2WoS$$aMaterials Science, Coatings & Films
000043846 084__ $$2WoS$$aPhysics, Applied
000043846 084__ $$2WoS$$aPhysics, Condensed Matter
000043846 1001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b0$$uFZJ
000043846 245__ $$aFabrication of Si/Ge nanowiring structures by MBE
000043846 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2004
000043846 300__ $$a185 - 189
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000043846 440_0 $$05762$$aThin Solid Films$$v464-465$$x0040-6090
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000043846 520__ $$aWe show that two-dimensional Si/Ge nanostructures can be imaged with chemical sensitivity on the nanometer scale using a scanning tunneling microscope (STM). Using an atomic layer of Bi terminating the surface, we can distinguish between Si and Ge. The apparent height measured by the STM is similar to 0.09 nm higher at areas consisting of Ge than on areas consisting of Si. This distinction between Si and Ge enabled us to fabricate and characterize two-dimensional Si/Ge nanostructures in a controlled way. Si/Ge nanostructures consisting of alternating Si and Ge rings having a width of 5-10 nm were grown around a 2D Si core island on a Si(111) substrate. The thickness of the Si and Ge rings is only one atomic layer (0.3 nm). Intermixing of Ge and Si is observed if the growth conditions are not chosen properly. The optimized growth conditions were obtained by lowering the temperature and decreasing the growth rate to prevent intermixing and nucleation of secondary islands. The present fabrication method is expected to be applied for nanostructured devices. (C) 2004 Elsevier B.V. All rights reserved.
000043846 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000043846 65320 $$2Author$$ananostructures
000043846 65320 $$2Author$$aself-organization
000043846 65320 $$2Author$$asilicon
000043846 65320 $$2Author$$agermanium
000043846 65320 $$2Author$$abismuth
000043846 65320 $$2Author$$amolecular beam epitaxy
000043846 65320 $$2Author$$ascanning tunneling microscope
000043846 7001_ $$0P:(DE-Juel1)VDB22268$$aKawamura, M.$$b1$$uFZJ
000043846 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2004.06.118$$gVol. 464-465, p. 185 - 189$$p185 - 189$$q464-465<185 - 189$$tThin solid films$$v464-465$$x0040-6090$$y2004
000043846 8567_ $$uhttp://dx.doi.org/10.1016/j.tsf.2004.06.118
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000043846 9141_ $$y2004
000043846 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000043846 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
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