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@ARTICLE{Voigtlnder:43846,
      author       = {Voigtländer, B. and Kawamura, M.},
      title        = {{F}abrication of {S}i/{G}e nanowiring structures by {MBE}},
      journal      = {Thin solid films},
      volume       = {464-465},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-43846},
      pages        = {185 - 189},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We show that two-dimensional Si/Ge nanostructures can be
                      imaged with chemical sensitivity on the nanometer scale
                      using a scanning tunneling microscope (STM). Using an atomic
                      layer of Bi terminating the surface, we can distinguish
                      between Si and Ge. The apparent height measured by the STM
                      is similar to 0.09 nm higher at areas consisting of Ge than
                      on areas consisting of Si. This distinction between Si and
                      Ge enabled us to fabricate and characterize two-dimensional
                      Si/Ge nanostructures in a controlled way. Si/Ge
                      nanostructures consisting of alternating Si and Ge rings
                      having a width of 5-10 nm were grown around a 2D Si core
                      island on a Si(111) substrate. The thickness of the Si and
                      Ge rings is only one atomic layer (0.3 nm). Intermixing of
                      Ge and Si is observed if the growth conditions are not
                      chosen properly. The optimized growth conditions were
                      obtained by lowering the temperature and decreasing the
                      growth rate to prevent intermixing and nucleation of
                      secondary islands. The present fabrication method is
                      expected to be applied for nanostructured devices. (C) 2004
                      Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {070},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000223988000042},
      doi          = {10.1016/j.tsf.2004.06.118},
      url          = {https://juser.fz-juelich.de/record/43846},
}