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000044684 1001_ $$0P:(DE-HGF)0$$aDikme, Y.$$b0
000044684 1112_ $$cNara, Japan$$d2003-05-25
000044684 245__ $$aSilicon (111) as alternative substrate for AlGaN/GaN HEMT
000044684 260__ $$c2003
000044684 29510 $$aThe Fifth International Conference on Nitride Semiconductors (ICNS-5)
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000044684 500__ $$3Presentation on a conference
000044684 536__ $$0G:(DE-Juel1)FUEK69$$2G:(DE-HGF)$$aHalbleiterschichtsysteme und Mesoskopische Strukturen$$c29.89.0$$x0
000044684 7001_ $$0P:(DE-HGF)0$$aFieger, M.$$b1
000044684 7001_ $$0P:(DE-HGF)0$$aSzymakowski, A.$$b2
000044684 7001_ $$0P:(DE-HGF)0$$aKalisch, H.$$b3
000044684 7001_ $$0P:(DE-Juel1)VDB5425$$aJavorka, P.$$b4$$uFZJ
000044684 7001_ $$0P:(DE-Juel1)VDB5422$$aMarso, M.$$b5$$uFZJ
000044684 7001_ $$0P:(DE-Juel1)VDB35476$$aKaluza, N.$$b6$$uFZJ
000044684 7001_ $$0P:(DE-HGF)0$$aJansen, R. H.$$b7
000044684 7001_ $$0P:(DE-HGF)0$$aHeuken, M.$$b8
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000044684 9131_ $$0G:(DE-Juel1)FUEK69$$bInformationstechnik$$k29.89.0$$lGrundlagenforschung zur Informationstechnik$$vHalbleiterschichtsysteme und Mesoskopische Strukturen$$x0
000044684 9141_ $$aNachtrag$$y2003
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