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@INPROCEEDINGS{Dikme:44684,
      author       = {Dikme, Y. and Fieger, M. and Szymakowski, A. and Kalisch,
                      H. and Javorka, P. and Marso, M. and Kaluza, N. and Jansen,
                      R. H. and Heuken, M.},
      title        = {{S}ilicon (111) as alternative substrate for
                      {A}l{G}a{N}/{G}a{N} {HEMT}},
      reportid     = {PreJuSER-44684},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {The Fifth International Conference on Nitride
                      Semiconductors (ICNS-5)},
      booktitle     = {The Fifth International Conference on
                       Nitride Semiconductors (ICNS-5)},
      month         = {May},
      date          = {2003-05-25},
      organization  = {Nara, Japan, 25 May 2003},
      cin          = {ISG-1},
      cid          = {I:(DE-Juel1)VDB41},
      pnm          = {Halbleiterschichtsysteme und Mesoskopische Strukturen},
      pid          = {G:(DE-Juel1)FUEK69},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/44684},
}