Home > Publications database > Silicon (111) as alternative substrate for AlGaN/GaN HEMT > print

001     44684
005     20180210130258.0
037 _ _ |a PreJuSER-44684
100 1 _ |a Dikme, Y.
|b 0
|0 P:(DE-HGF)0
111 2 _ |c Nara, Japan
|d 2003-05-25
245 _ _ |a Silicon (111) as alternative substrate for AlGaN/GaN HEMT
260 _ _ |c 2003
295 1 0 |a The Fifth International Conference on Nitride Semiconductors (ICNS-5)
336 7 _ |a Conference Presentation
|0 PUB:(DE-HGF)6
|2 PUB:(DE-HGF)
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a LECTURE_SPEECH
|2 ORCID
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a INPROCEEDINGS
|2 BibTeX
500 _ _ |a Record converted from VDB: 12.11.2012
500 _ _ |3 Presentation on a conference
536 _ _ |a Halbleiterschichtsysteme und Mesoskopische Strukturen
|c 29.89.0
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK69
|x 0
700 1 _ |a Fieger, M.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Szymakowski, A.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Kalisch, H.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Javorka, P.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB5425
700 1 _ |a Marso, M.
|b 5
|u FZJ
|0 P:(DE-Juel1)VDB5422
700 1 _ |a Kaluza, N.
|b 6
|u FZJ
|0 P:(DE-Juel1)VDB35476
700 1 _ |a Jansen, R. H.
|b 7
|0 P:(DE-HGF)0
700 1 _ |a Heuken, M.
|b 8
|0 P:(DE-HGF)0
909 C O |o oai:juser.fz-juelich.de:44684
|p VDB
913 1 _ |k 29.89.0
|v Halbleiterschichtsysteme und Mesoskopische Strukturen
|l Grundlagenforschung zur Informationstechnik
|b Informationstechnik
|0 G:(DE-Juel1)FUEK69
|x 0
914 1 _ |a Nachtrag
|y 2003
920 1 _ |k ISG-1
|l Institut für Halbleiterschichten und Bauelemente
|d 31.12.2006
|g ISG
|0 I:(DE-Juel1)VDB41
|x 0
970 _ _ |a VDB:(DE-Juel1)65445
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a conf
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-9-20110106

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21