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001     44685
005     20180210124835.0
037 _ _ |a PreJuSER-44685
100 1 _ |a Dikme, Y.
|b 0
|0 P:(DE-HGF)0
111 2 _ |c Lecce, Italy
|d 2003-06-08
245 _ _ |a Growth of buffer structures for AlGaN/GaN HEMT on silicon substrates
260 _ _ |c 2003
295 1 0 |a EW-MOVPE-X
336 7 _ |a Conference Presentation
|0 PUB:(DE-HGF)6
|2 PUB:(DE-HGF)
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a LECTURE_SPEECH
|2 ORCID
336 7 _ |a conferenceObject
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336 7 _ |a INPROCEEDINGS
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500 _ _ |a Record converted from VDB: 12.11.2012
500 _ _ |3 Presentation on a conference
536 _ _ |a Halbleiterschichtsysteme und Mesoskopische Strukturen
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700 1 _ |a Kalisch, H.
|b 1
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700 1 _ |a Fieger, M.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Chem, H. M.
|b 3
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700 1 _ |a Szymakowski, A.
|b 4
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700 1 _ |a Javorka, P.
|b 5
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700 1 _ |a Marso, M.
|b 6
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700 1 _ |a Kaluza, N.
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700 1 _ |a Jansen, R. H.
|b 8
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700 1 _ |a Heuken, M.
|b 9
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909 C O |o oai:juser.fz-juelich.de:44685
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913 1 _ |k 29.89.0
|v Halbleiterschichtsysteme und Mesoskopische Strukturen
|l Grundlagenforschung zur Informationstechnik
|b Informationstechnik
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914 1 _ |a Nachtrag
|y 2003
920 1 _ |k ISG-1
|l Institut für Halbleiterschichten und Bauelemente
|d 31.12.2006
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970 _ _ |a VDB:(DE-Juel1)65446
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a conf
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-9-20110106

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