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000044705 084__ $$2WoS$$aMaterials Science, Ceramics
000044705 1001_ $$0P:(DE-HGF)0$$aHofer, C.$$b0
000044705 245__ $$aScaling effect on the dielectric constant in Ba(TixZr1-x)O3 thin films
000044705 260__ $$aDordrecht [u.a.]$$bSpringer Science + Business Media B.V$$c2004
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000044705 440_0 $$03263$$aJournal of Electroceramics$$v13$$x1385-3449$$y1
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000044705 520__ $$aRecent work on PZT and BST thin films reveal a thickness dependence of the dielectric constant for a film thickness below 100 nm. This effect is commonly attributed to an interfacial layer between the electrode and the dielectric film (dead layer). In this contribution we report on the influence of the film thickness on the dielectric constant of Ba(TixZr1-x)O-3 thin films with different Zr-contents (x = 0-30 at.%). The films were prepared by chemical solution deposition (CSD) with thickness between 30 and 350 nm.The electrical characterization was performed in a temperature range between 25 and 200degreesC. Results were interpreted with respect to the formation of a serial dead layer capacitance.
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000044705 65320 $$2Author$$adielectric properties
000044705 65320 $$2Author$$aBa(TixZr1-x)O-3
000044705 65320 $$2Author$$ainterface capacitance
000044705 7001_ $$0P:(DE-HGF)0$$aEllerkmann, U.$$b1
000044705 7001_ $$0P:(DE-HGF)0$$aHalder, S.$$b2
000044705 7001_ $$0P:(DE-Juel1)VDB5958$$aMeyer, R.$$b3$$uFZJ
000044705 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4$$uFZJ
000044705 773__ $$0PERI:(DE-600)1472395-5$$gVol. 13$$q13$$tJournal of electroceramics$$v13$$x1385-3449$$y2004
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