TY  - JOUR
AU  - Hofer, C.
AU  - Ellerkmann, U.
AU  - Halder, S.
AU  - Meyer, R.
AU  - Waser, R.
TI  - Scaling effect on the dielectric constant in Ba(TixZr1-x)O3 thin films
JO  - Journal of electroceramics
VL  - 13
SN  - 1385-3449
CY  - Dordrecht [u.a.]
PB  - Springer Science + Business Media B.V
M1  - PreJuSER-44705
PY  - 2004
N1  - Record converted from VDB: 12.11.2012
AB  - Recent work on PZT and BST thin films reveal a thickness dependence of the dielectric constant for a film thickness below 100 nm. This effect is commonly attributed to an interfacial layer between the electrode and the dielectric film (dead layer). In this contribution we report on the influence of the film thickness on the dielectric constant of Ba(TixZr1-x)O-3 thin films with different Zr-contents (x = 0-30 at.%). The films were prepared by chemical solution deposition (CSD) with thickness between 30 and 350 nm.The electrical characterization was performed in a temperature range between 25 and 200degreesC. Results were interpreted with respect to the formation of a serial dead layer capacitance.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000226236100016
UR  - https://juser.fz-juelich.de/record/44705
ER  -