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@ARTICLE{Hofer:44705,
author = {Hofer, C. and Ellerkmann, U. and Halder, S. and Meyer, R.
and Waser, R.},
title = {{S}caling effect on the dielectric constant in
{B}a({T}ix{Z}r1-x){O}3 thin films},
journal = {Journal of electroceramics},
volume = {13},
issn = {1385-3449},
address = {Dordrecht [u.a.]},
publisher = {Springer Science + Business Media B.V},
reportid = {PreJuSER-44705},
year = {2004},
note = {Record converted from VDB: 12.11.2012},
abstract = {Recent work on PZT and BST thin films reveal a thickness
dependence of the dielectric constant for a film thickness
below 100 nm. This effect is commonly attributed to an
interfacial layer between the electrode and the dielectric
film (dead layer). In this contribution we report on the
influence of the film thickness on the dielectric constant
of Ba(TixZr1-x)O-3 thin films with different Zr-contents (x
= 0-30 $at.\%).$ The films were prepared by chemical
solution deposition (CSD) with thickness between 30 and 350
nm.The electrical characterization was performed in a
temperature range between 25 and 200degreesC. Results were
interpreted with respect to the formation of a serial dead
layer capacitance.},
keywords = {J (WoSType)},
cin = {IFF-IEM / CNI},
ddc = {620},
cid = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Materials Science, Ceramics},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000226236100016},
url = {https://juser.fz-juelich.de/record/44705},
}