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@ARTICLE{Teren:44707,
      author       = {Teren, A. R. and Thomas, R. and He, J. and Ehrhart, P.},
      title        = {{C}omparison of precursors for pulsed metal-organic
                      chemical vapor deposition of {H}f{O}2 high-k dielectric thin
                      films},
      journal      = {Thin solid films},
      volume       = {478},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-44707},
      pages        = {206},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Hafnium oxide films were deposited on Si(100) substrates
                      using pulsed metal-organic chemical vapor deposition (CVD)
                      and evaluated for high-K dielectric applications. Three
                      types of precursors were tested: two oxygenated ones, Hf
                      butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one,
                      Hf diethyl-amide. Depositions were carried out in the
                      temperature range of 350-650 degrees C, yielding different
                      microstructures ranging from amorphous to crystalline,
                      monoclinic, films. The films were compared on the basis of
                      growth rate, phase development, density, interface
                      characteristics, and electrical properties. Some specific
                      features of the pulsed injection technique are considered.
                      For low deposition temperatures the growth rate for the
                      amide precursor was significantly higher than for the mixed
                      butoxide precursors. A thickness-dependent amorphous to
                      crystalline phase transition temperature was found for all
                      precursors. There is an increase of the film density along
                      with the deposition temperature from values as low as
                      5g/cm(3) at 350 degrees C to values close to the bulk value
                      of 9.7 g/cm(3) at 550 degrees C. Crystallization is observed
                      in the same temperature range for films of typically 10-20
                      nm thickness. However, annealing studies show that this
                      density increase is not simply related to the
                      crystallization of the films. Similar electrical properties
                      could be observed for all precursors and the dielectric
                      constant of the films reaches values similar to the best
                      values reported for bulk crystalline HfO2. (c) 2004 Elsevier
                      B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI / IFF-IMF},
      ddc          = {070},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 /
                      I:(DE-Juel1)VDB37},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000228039800034},
      doi          = {10.1016/j.tsf.2004.11.055},
      url          = {https://juser.fz-juelich.de/record/44707},
}