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000004488 084__ $$2WoS$$aChemistry, Physical
000004488 084__ $$2WoS$$aPhysics, Atomic, Molecular & Chemical
000004488 1001_ $$0P:(DE-Juel1)VDB61376$$aSchindler, C.$$b0$$uFZJ
000004488 245__ $$aFaradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells
000004488 260__ $$aCambridge$$bRSC Publ.$$c2009
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000004488 440_0 $$04916$$aPhysical Chemistry Chemical Physics$$vxx$$x1463-9076$$yxx
000004488 500__ $$aFruitful discussions with Prof. T. Hasegawa, Dr G. Staikov and Dr R. Bruchhaus and financial support by the Deutsche Forschungsgemeinschaft are gratefully acknowledged. The authors thank B. Hollander for support with the RBS measurements.
000004488 520__ $$aResistive switching due to electrochemical filament formation and dissolution is observed in a variety of materials. Mostly, an electroforming process is required to modify the active material and form a first filament. In this study, the forming process and low current resistive switching in Ag/Ag-Ge-Se/Pt memory cells was investigated. In contrast to most other resistively switching memory devices, the first current-voltage cycle was needed to reduce the metal content in the chalcogenide layer. Temperature dependent and sweep-rate dependent measurements of the faradaic current were performed, and the metal content in the Ag-Ge-Se thin film was estimated. After forming, resistive switching with a write current of only 1 nA was observed demonstrating the feasibility of the fabrication of memory cells with ultra low power consumption.
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000004488 773__ $$0PERI:(DE-600)1476244-4$$a10.1039/b901026b$$gVol. 11$$q11$$tPhysical Chemistry Chemical Physics$$v11$$x1463-9076$$y2009
000004488 8567_ $$uhttp://dx.doi.org/10.1039/b901026b
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