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@ARTICLE{Schindler:4488,
      author       = {Schindler, C. and Valov, I. and Waser, R.},
      title        = {{F}aradaic currents during electroforming of resistively
                      switching {A}g-{G}e-{S}e type electrochemical metallization
                      memory cells},
      journal      = {Physical Chemistry Chemical Physics},
      volume       = {11},
      issn         = {1463-9076},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {PreJuSER-4488},
      year         = {2009},
      note         = {Fruitful discussions with Prof. T. Hasegawa, Dr G. Staikov
                      and Dr R. Bruchhaus and financial support by the Deutsche
                      Forschungsgemeinschaft are gratefully acknowledged. The
                      authors thank B. Hollander for support with the RBS
                      measurements.},
      abstract     = {Resistive switching due to electrochemical filament
                      formation and dissolution is observed in a variety of
                      materials. Mostly, an electroforming process is required to
                      modify the active material and form a first filament. In
                      this study, the forming process and low current resistive
                      switching in Ag/Ag-Ge-Se/Pt memory cells was investigated.
                      In contrast to most other resistively switching memory
                      devices, the first current-voltage cycle was needed to
                      reduce the metal content in the chalcogenide layer.
                      Temperature dependent and sweep-rate dependent measurements
                      of the faradaic current were performed, and the metal
                      content in the Ag-Ge-Se thin film was estimated. After
                      forming, resistive switching with a write current of only 1
                      nA was observed demonstrating the feasibility of the
                      fabrication of memory cells with ultra low power
                      consumption.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Chemistry, Physical / Physics, Atomic, Molecular $\&$
                      Chemical},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:19588020},
      UT           = {WOS:000268034900017},
      doi          = {10.1039/b901026b},
      url          = {https://juser.fz-juelich.de/record/4488},
}