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000004489 084__ $$2WoS$$aPhysics, Condensed Matter
000004489 1001_ $$0P:(DE-Juel1)VDB58644$$aJeong, D. S.$$b0$$uFZJ
000004489 245__ $$aMechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell
000004489 260__ $$aCollege Park, Md.$$bAPS$$c2009
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000004489 520__ $$aWe suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in terms of electrochemical reactions involving oxygen ions/vacancies. The electrochemical reactions are considered to take place at an interface between Pt and TiO2 solid electrolyte, and they modulate the Schottky barrier height at the interface. Calculation results using this proposed mechanism can explain a bipolar switching behavior and semiquantitatively describe experimental data.
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000004489 65320 $$2Author$$acells (electric)
000004489 65320 $$2Author$$aelectrochemistry
000004489 65320 $$2Author$$aplatinum
000004489 65320 $$2Author$$aSchottky barriers
000004489 65320 $$2Author$$asolid electrolytes
000004489 65320 $$2Author$$aswitching
000004489 65320 $$2Author$$atitanium compounds
000004489 65320 $$2Author$$avacancies (crystal)
000004489 7001_ $$0P:(DE-Juel1)VDB3130$$aSchroeder, H.$$b1$$uFZJ
000004489 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2$$uFZJ
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000004489 8567_ $$uhttp://dx.doi.org/10.1103/PhysRevB.79.195317
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