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024 7 _ |a 10.1103/PhysRevB.79.195317
|2 DOI
024 7 _ |a WOS:000266501300089
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024 7 _ |a 2128/11046
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037 _ _ |a PreJuSER-4489
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Jeong, D. S.
|b 0
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245 _ _ |a Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell
260 _ _ |a College Park, Md.
|b APS
|c 2009
300 _ _ |a 195317
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Physical Review B
|x 1098-0121
|0 4919
|y 19
|v 79
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in terms of electrochemical reactions involving oxygen ions/vacancies. The electrochemical reactions are considered to take place at an interface between Pt and TiO2 solid electrolyte, and they modulate the Schottky barrier height at the interface. Calculation results using this proposed mechanism can explain a bipolar switching behavior and semiquantitatively describe experimental data.
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542 _ _ |i 2009-05-18
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|u http://link.aps.org/licenses/aps-default-license
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
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653 2 0 |2 Author
|a cells (electric)
653 2 0 |2 Author
|a electrochemistry
653 2 0 |2 Author
|a platinum
653 2 0 |2 Author
|a Schottky barriers
653 2 0 |2 Author
|a solid electrolytes
653 2 0 |2 Author
|a switching
653 2 0 |2 Author
|a titanium compounds
653 2 0 |2 Author
|a vacancies (crystal)
700 1 _ |a Schroeder, H.
|b 1
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700 1 _ |a Waser, R.
|b 2
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773 1 8 |a 10.1103/physrevb.79.195317
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|d 2009-05-18
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|t Physical Review B
|v 79
|y 2009
|x 1098-0121
773 _ _ |a 10.1103/PhysRevB.79.195317
|g Vol. 79, p. 195317
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|y 2009
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevB.79.195317
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|9 -- missing cx lookup --
|2 Crossref
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|9 -- missing cx lookup --
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|2 Crossref
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|9 -- missing cx lookup --
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|9 -- missing cx lookup --
|2 Crossref
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|1 V. E. Henrich
|2 Crossref
|9 -- missing cx lookup --
|y 1994
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|9 -- missing cx lookup --
|2 Crossref
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|y 2007
|2 Crossref
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|o C. H. Hamann Electrochemistry 2007
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|9 -- missing cx lookup --
|2 Crossref
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|9 -- missing cx lookup --
|2 Crossref
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|2 Crossref
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|9 -- missing cx lookup --
|2 Crossref
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|1 K. W. Morton
|2 Crossref
|9 -- missing cx lookup --
|y 2005
999 C 5 |1 W. H. Press
|y 1992
|2 Crossref
|t Numerical Recipes in C: The Art of Scientific Computing
|o W. H. Press Numerical Recipes in C: The Art of Scientific Computing 1992
999 C 5 |1 S. M. Sze
|y 2007
|2 Crossref
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|o S. M. Sze Physics of Semiconductor Devices 2007
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|9 -- missing cx lookup --
|2 Crossref
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|9 -- missing cx lookup --
|2 Crossref
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|9 -- missing cx lookup --
|2 Crossref
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|y 2002
|2 Crossref
|t Principle of Electronic Materials and Devices
|o S. O. Kasap Principle of Electronic Materials and Devices 2002
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|2 Crossref

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