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001     45391
005     20190625111041.0
024 7 _ |2 DOI
|a 10.1007/s00339-004-3167-z
024 7 _ |2 WOS
|a WOS:000227696100015
024 7 _ |2 ISSN
|a 0947-8396
024 7 _ |a altmetric:21813636
|2 altmetric
037 _ _ |a PreJuSER-45391
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Rüdiger, A.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB26957
245 _ _ |a Nanosize ferroelectric oxides - tracking down the superparaelectric limit
260 _ _ |c 2005
|a Berlin
|b Springer
300 _ _ |a 1247
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Applied Physics A
|x 0947-8396
|0 560
|v 80
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Free ferroelectric nanoparticles in the order of 10 nm undergo a size driven phase transition into a paraelectric phase. However, in all applications, especially in ferroelectric random access memories, ferroelectric nanograins are integrated into a circuit. They are therefore exposed to new electromechanical boundary conditions e.g. substrate strain and screening of the depolarization field in the electrodes. Carefully adapted to the respective material, some of the extrinsic effects can be used to stabilize ferroelectricity and to shrink the ultimate size. The system performance is very sensitive to the fabrication and processing procedures.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
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700 1 _ |a Schneller, T.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB3028
700 1 _ |a Roelofs, A.
|b 2
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|0 P:(DE-Juel1)VDB5678
700 1 _ |a Tiedke, S.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Schmitz, T.
|b 4
|0 P:(DE-HGF)0
700 1 _ |a Waser, R.
|b 5
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |0 PERI:(DE-600)1398311-8
|a 10.1007/s00339-004-3167-z
|g Vol. 80, p. 1247
|p 1247
|q 80<1247
|t Applied physics / A
|v 80
|x 0947-8396
|y 2005
856 7 _ |u http://dx.doi.org/10.1007/s00339-004-3167-z
909 C O |o oai:juser.fz-juelich.de:45391
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
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914 1 _ |y 2005
915 _ _ |a JCR/ISI refereed
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915 _ _ |a DBCoverage
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920 1 _ |k IFF-IEM
|l Elektronische Materialien
|d 31.12.2006
|g IFF
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|x 0
920 1 _ |k CNI
|l Center of Nanoelectronic Systems for Information Technology
|d 14.09.2008
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980 _ _ |a I:(DE-Juel1)VDB381
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
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