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000046022 0247_ $$2DOI$$a10.1016/j.jcrysgro.2004.12.137
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000046022 084__ $$2WoS$$aCrystallography
000046022 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000046022 084__ $$2WoS$$aPhysics, Applied
000046022 1001_ $$0P:(DE-Juel1)VDB5562$$aRodriguez Contreras, J.$$b0$$uFZJ
000046022 245__ $$aImproved PbZr0.52Ti0.48O3 film quality on SrRuO3/SrTiO3 substrates
000046022 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2005
000046022 300__ $$a210 - 217
000046022 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
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000046022 440_0 $$03235$$aJournal of Crystal Growth$$v277$$x0022-0248
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000046022 520__ $$aWe have used high-pressure on-axis sputtering to deposit single crystalline epitaxial PbZr0.52Ti0.48O3 either on SrRuO3/SrTiO3 or on SrTiO3 substrates. The PbZr0.52Ti0.48O3 films possess a small mosaicity on both, on SrRuO3/SrTiO3 and on SrTiO3 substrates. PbZr0.52Ti0.48O3 thin films have a larger out-of-plane lattice parameter and a smaller in-plane lattice parameter when it is grown on SrRuO3/SrTiO3 substrates. Atomic force microscopy reveals very smooth surfaces. The stoichiometry has been verified by Rutherford backscattering spectrometry. Channeling measurements indicate that the crystalline quality of the PbZr0.52Ti0.48O3 films grown on SrRuO3/SrTiO3 substrate is significantly improved compared to its deposition on blank SrTiO3 substrates. This observation is discussed in the framework of lattice mismatch, thermal expansion coefficients, interdiffusion at the PbZr0.52Ti0.48O3/SrRuO3 interface, the depolarization field in the ferroelectrics and the surface layer termination of the substrate. (c) 2005 Elsevier B.V. All rights reserved.
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000046022 65320 $$2Author$$acrystal morphology
000046022 65320 $$2Author$$aperovskite
000046022 65320 $$2Author$$aferroelectric materials
000046022 7001_ $$0P:(DE-Juel1)VDB3107$$aKohlstedt, H.$$b1$$uFZJ
000046022 7001_ $$0P:(DE-Juel1)VDB5557$$aPetraru, A.$$b2$$uFZJ
000046022 7001_ $$0P:(DE-Juel1)130241$$aGerber, A.$$b3$$uFZJ
000046022 7001_ $$0P:(DE-Juel1)VDB25956$$aHermanns, B.$$b4$$uFZJ
000046022 7001_ $$0P:(DE-Juel1)VDB26000$$aHaselier, H.$$b5$$uFZJ
000046022 7001_ $$0P:(DE-Juel1)VDB25837$$aNagarajan, N.$$b6$$uFZJ
000046022 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b7$$uFZJ
000046022 7001_ $$0P:(DE-Juel1)VDB21377$$aPoppe, U.$$b8$$uFZJ
000046022 7001_ $$0P:(DE-Juel1)VDB5399$$aBuchal, C.$$b9$$uFZJ
000046022 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b10$$uFZJ
000046022 773__ $$0PERI:(DE-600)1466514-1$$a10.1016/j.jcrysgro.2004.12.137$$gVol. 277, p. 210 - 217$$p210 - 217$$q277<210 - 217$$tJournal of crystal growth$$v277$$x0022-0248$$y2005
000046022 8567_ $$uhttp://dx.doi.org/10.1016/j.jcrysgro.2004.12.137
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