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@ARTICLE{RodriguezContreras:46022,
      author       = {Rodriguez Contreras, J. and Kohlstedt, H. and Petraru, A.
                      and Gerber, A. and Hermanns, B. and Haselier, H. and
                      Nagarajan, N. and Schubert, J. and Poppe, U. and Buchal, C.
                      and Waser, R.},
      title        = {{I}mproved {P}b{Z}r0.52{T}i0.48{O}3 film quality on
                      {S}r{R}u{O}3/{S}r{T}i{O}3 substrates},
      journal      = {Journal of crystal growth},
      volume       = {277},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-46022},
      pages        = {210 - 217},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We have used high-pressure on-axis sputtering to deposit
                      single crystalline epitaxial PbZr0.52Ti0.48O3 either on
                      SrRuO3/SrTiO3 or on SrTiO3 substrates. The PbZr0.52Ti0.48O3
                      films possess a small mosaicity on both, on SrRuO3/SrTiO3
                      and on SrTiO3 substrates. PbZr0.52Ti0.48O3 thin films have a
                      larger out-of-plane lattice parameter and a smaller in-plane
                      lattice parameter when it is grown on SrRuO3/SrTiO3
                      substrates. Atomic force microscopy reveals very smooth
                      surfaces. The stoichiometry has been verified by Rutherford
                      backscattering spectrometry. Channeling measurements
                      indicate that the crystalline quality of the
                      PbZr0.52Ti0.48O3 films grown on SrRuO3/SrTiO3 substrate is
                      significantly improved compared to its deposition on blank
                      SrTiO3 substrates. This observation is discussed in the
                      framework of lattice mismatch, thermal expansion
                      coefficients, interdiffusion at the PbZr0.52Ti0.48O3/SrRuO3
                      interface, the depolarization field in the ferroelectrics
                      and the surface layer termination of the substrate. (c) 2005
                      Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI / IFF-IMF / ISG-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB37
                      / I:(DE-Juel1)VDB41},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Crystallography / Materials Science, Multidisciplinary /
                      Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000228737900033},
      doi          = {10.1016/j.jcrysgro.2004.12.137},
      url          = {https://juser.fz-juelich.de/record/46022},
}