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000046286 084__ $$2WoS$$aChemistry, Physical
000046286 084__ $$2WoS$$aPhysics, Atomic, Molecular & Chemical
000046286 1001_ $$0P:(DE-HGF)0$$aGömann, K.$$b0
000046286 245__ $$aSr diffusion in undoped and La-doped SrTiO3 single crystals under oxidizing conditions
000046286 260__ $$aCambridge$$bRSC Publ.$$c2005
000046286 300__ $$a2053 - 2060
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000046286 440_0 $$04916$$aPhysical Chemistry Chemical Physics$$v7$$x1463-9076
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000046286 520__ $$aStrontium titanate SrTiO3(100), (110), and (111) single crystals, undoped or donor doped with up to 1 at% La, were isothermally equilibrated at temperatures between 1523 and 1773 K in synthetic air followed by two different methods of Sr tracer deposition: ion implantation of Sr-87 and chemical solution deposition of a thin (SrTiO3)-Sr-86 layer. Subsequently, the samples were diffusion annealed under the same conditions as before. The initial and final depth profiles were measured by SIMS. For strong La-doping both tracer deposition methods yield similar Sr diffusion coefficients, whereas for weak doping the tracer seems to be immobile in the case of ion implantation. The Sr diffusivity does not depend on the crystal orientation, but shows strong dependency on the dopant concentration supporting the defect chemical model that under oxidizing conditions the donor is compensated by Sr vacancies. A comparison with literature data on Sr vacancy, Ti, and La diffusion in this system confirms the concept that all cations move via Sr vacancies. Cation diffusion is several orders of magnitude slower than oxygen diffusion.
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000046286 7001_ $$0P:(DE-HGF)0$$aBorchardt, G.$$b1
000046286 7001_ $$0P:(DE-HGF)0$$aSchulz, M.$$b2
000046286 7001_ $$0P:(DE-HGF)0$$aGömann, A.$$b3
000046286 7001_ $$0P:(DE-HGF)0$$aMaus-Friedrichs, W.$$b4
000046286 7001_ $$0P:(DE-HGF)0$$aLesage, B.$$b5
000046286 7001_ $$0P:(DE-HGF)0$$aKaitasov, O.$$b6
000046286 7001_ $$0P:(DE-Juel1)VDB3102$$aHoffmann-Eifert, S.$$b7$$uFZJ
000046286 7001_ $$0P:(DE-HGF)0$$aSchneller, T.$$b8
000046286 773__ $$0PERI:(DE-600)1476244-4$$a10.1039/b418824a$$gVol. 7, p. 2053 - 2060$$n9$$p2053 - 2060$$q7<2053 - 2060$$tPhysical Chemistry Chemical Physics$$v7$$x1463-9076$$y2005
000046286 8567_ $$uhttp://hdl.handle.net/2128/1003$$uhttp://dx.doi.org/10.1039/b418824a
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000046286 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0
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