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@ARTICLE{Gmann:46286,
      author       = {Gömann, K. and Borchardt, G. and Schulz, M. and Gömann,
                      A. and Maus-Friedrichs, W. and Lesage, B. and Kaitasov, O.
                      and Hoffmann-Eifert, S. and Schneller, T.},
      title        = {{S}r diffusion in undoped and {L}a-doped {S}r{T}i{O}3
                      single crystals under oxidizing conditions},
      journal      = {Physical Chemistry Chemical Physics},
      volume       = {7},
      number       = {9},
      issn         = {1463-9076},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {PreJuSER-46286},
      pages        = {2053 - 2060},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Strontium titanate SrTiO3(100), (110), and (111) single
                      crystals, undoped or donor doped with up to 1 $at\%$ La,
                      were isothermally equilibrated at temperatures between 1523
                      and 1773 K in synthetic air followed by two different
                      methods of Sr tracer deposition: ion implantation of Sr-87
                      and chemical solution deposition of a thin (SrTiO3)-Sr-86
                      layer. Subsequently, the samples were diffusion annealed
                      under the same conditions as before. The initial and final
                      depth profiles were measured by SIMS. For strong La-doping
                      both tracer deposition methods yield similar Sr diffusion
                      coefficients, whereas for weak doping the tracer seems to be
                      immobile in the case of ion implantation. The Sr diffusivity
                      does not depend on the crystal orientation, but shows strong
                      dependency on the dopant concentration supporting the defect
                      chemical model that under oxidizing conditions the donor is
                      compensated by Sr vacancies. A comparison with literature
                      data on Sr vacancy, Ti, and La diffusion in this system
                      confirms the concept that all cations move via Sr vacancies.
                      Cation diffusion is several orders of magnitude slower than
                      oxygen diffusion.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Chemistry, Physical / Physics, Atomic, Molecular $\&$
                      Chemical},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000228634500023},
      doi          = {10.1039/b418824a},
      url          = {https://juser.fz-juelich.de/record/46286},
}