%0 Journal Article
%A Dylla, T.
%A Finger, F.
%A Schiff, A.
%T Hole drift-mobility Measurements in Microcrystalline Silicon
%J Applied physics letters
%V 87
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-46335
%P 032103
%D 2005
%Z Record converted from VDB: 12.11.2012
%X We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1-2 cm(2)/V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm(2)/V s. (c) 2005 American Institute of Physics.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000230596000031
%R 10.1063/1.1984087
%U https://juser.fz-juelich.de/record/46335