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000046335 084__ $$2WoS$$aPhysics, Applied
000046335 1001_ $$0P:(DE-Juel1)VDB12812$$aDylla, T.$$b0$$uFZJ
000046335 245__ $$aHole drift-mobility Measurements in Microcrystalline Silicon
000046335 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2005
000046335 300__ $$a032103
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000046335 440_0 $$0562$$aApplied Physics Letters$$v87$$x0003-6951
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000046335 520__ $$aWe have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1-2 cm(2)/V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm(2)/V s. (c) 2005 American Institute of Physics.
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000046335 7001_ $$0P:(DE-Juel1)130238$$aFinger, F.$$b1$$uFZJ
000046335 7001_ $$0P:(DE-HGF)0$$aSchiff, A.$$b2
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