TY  - JOUR
AU  - Dylla, T.
AU  - Finger, F.
AU  - Schiff, A.
TI  - Hole drift-mobility Measurements in Microcrystalline Silicon
JO  - Applied physics letters
VL  - 87
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-46335
SP  - 032103
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
AB  - We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1-2 cm(2)/V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm(2)/V s. (c) 2005 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000230596000031
DO  - DOI:10.1063/1.1984087
UR  - https://juser.fz-juelich.de/record/46335
ER  -