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@ARTICLE{Dylla:46335,
author = {Dylla, T. and Finger, F. and Schiff, A.},
title = {{H}ole drift-mobility {M}easurements in {M}icrocrystalline
{S}ilicon},
journal = {Applied physics letters},
volume = {87},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-46335},
pages = {032103},
year = {2005},
note = {Record converted from VDB: 12.11.2012},
abstract = {We have measured transient photocurrents on several p-i-n
solar cells based on microcrystalline silicon. For two of
these samples, we were able to obtain conclusive hole
drift-mobility measurements. Despite the predominant
crystallinity of these samples, temperature-dependent
measurements were consistent with an exponential-bandtail
trapping model for transport, which is usually associated
with noncrystalline materials. We estimated valence bandtail
widths of about 31 meV and hole band mobilities of 1-2
cm(2)/V s. The measurements support mobility-edge transport
for holes in these microcrystalline materials, and broaden
the range of materials for which mobility-edge transport
corresponds to an apparently universal band mobility of
order 1 cm(2)/V s. (c) 2005 American Institute of Physics.},
keywords = {J (WoSType)},
cin = {IPV},
ddc = {530},
cid = {I:(DE-Juel1)VDB46},
pnm = {Photovoltaik},
pid = {G:(DE-Juel1)FUEK247},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000230596000031},
doi = {10.1063/1.1984087},
url = {https://juser.fz-juelich.de/record/46335},
}