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017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1063/1.1984087
|2 DOI
024 7 _ |a WOS:000230596000031
|2 WOS
024 7 _ |a 2128/1940
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037 _ _ |a PreJuSER-46335
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Dylla, T.
|b 0
|u FZJ
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245 _ _ |a Hole drift-mobility Measurements in Microcrystalline Silicon
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2005
300 _ _ |a 032103
336 7 _ |a Journal Article
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336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 87
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1-2 cm(2)/V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm(2)/V s. (c) 2005 American Institute of Physics.
536 _ _ |a Photovoltaik
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
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700 1 _ |a Finger, F.
|b 1
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|0 P:(DE-Juel1)130238
700 1 _ |a Schiff, A.
|b 2
|0 P:(DE-HGF)0
773 _ _ |a 10.1063/1.1984087
|g Vol. 87, p. 032103
|p 032103
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|0 PERI:(DE-600)1469436-0
|t Applied physics letters
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|y 2005
|x 0003-6951
856 7 _ |u http://dx.doi.org/10.1063/1.1984087
|u http://hdl.handle.net/2128/1940
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913 1 _ |k E02
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|l Erneuerbare Energien
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914 1 _ |y 2005
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
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920 1 _ |k IPV
|l Institut für Photovoltaik
|d 31.12.2006
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