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| 017 | _ | _ | |a This version is available at the following Publisher URL: http://apl.aip.org |
| 024 | 7 | _ | |a 10.1063/1.1984087 |2 DOI |
| 024 | 7 | _ | |a WOS:000230596000031 |2 WOS |
| 024 | 7 | _ | |a 2128/1940 |2 Handle |
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| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Dylla, T. |b 0 |u FZJ |0 P:(DE-Juel1)VDB12812 |
| 245 | _ | _ | |a Hole drift-mobility Measurements in Microcrystalline Silicon |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2005 |
| 300 | _ | _ | |a 032103 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Applied Physics Letters |x 0003-6951 |0 562 |v 87 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1-2 cm(2)/V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm(2)/V s. (c) 2005 American Institute of Physics. |
| 536 | _ | _ | |a Photovoltaik |c E02 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK247 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Finger, F. |b 1 |u FZJ |0 P:(DE-Juel1)130238 |
| 700 | 1 | _ | |a Schiff, A. |b 2 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |a 10.1063/1.1984087 |g Vol. 87, p. 032103 |p 032103 |q 87<032103 |0 PERI:(DE-600)1469436-0 |t Applied physics letters |v 87 |y 2005 |x 0003-6951 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.1984087 |u http://hdl.handle.net/2128/1940 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/46335/files/73071.pdf |y OpenAccess |
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| 914 | 1 | _ | |y 2005 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
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