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017 _ _ |a This version is available at the following Publisher URL: http://publish.aps.org
024 7 _ |a 10.1103/PhysRevB.72.085443
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024 7 _ |a WOS:000231564600170
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024 7 _ |a 2128/2189
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041 _ _ |a eng
082 _ _ |a 530
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|a Physics, Condensed Matter
100 1 _ |a Slebarski, E. C.
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245 _ _ |a Influence of grain-boundary defects on electric transport in CeRhSn with a non-Fermi-liquid ground state
260 _ _ |a College Park, Md.
|b APS
|c 2005
300 _ _ |a 085443-1 - 085443-6
336 7 _ |a Journal Article
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440 _ 0 |a Physical Review B
|x 1098-0121
|0 4919
|y 8
|v 72
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Measurements by atomic force microscopy reported for a polycrystalline CeRhSn sample show nanometer-sized grains consisting of crystalline components. The grains are separated by a grain boundary. The high-resolution electron microscopy and secondary-ion mass spectrometry were used to determine homogeneity of the grains and the grain boundary. The grains are homogeneous up to about 60% of the major phase, with slightly off-stoichiometric phases constituting the balance, whereas the volume fractions of intercrystalline components are strongly inhomogeneous and off stoichiometric. We argue that there is possibly a ballistic transport of electrons through an interface between the grains, which strongly modifies the resistivity of the CeRhSn stoichiometric grains, which is non-Fermi-liquid in character.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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542 _ _ |i 2005-08-18
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700 1 _ |a Szot, K.
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700 1 _ |a Gamza, M.
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700 1 _ |a Penkalla, H.-J.
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700 1 _ |a Breuer, U.
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773 1 8 |a 10.1103/physrevb.72.085443
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|t Physical Review B
|v 72
|y 2005
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773 _ _ |a 10.1103/PhysRevB.72.085443
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevB.72.085443
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999 C 5 |a 10.1080/713838203
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999 C 5 |a 10.1103/PhysRevB.48.7183
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999 C 5 |a 10.1103/PhysRevLett.81.3531
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999 C 5 |a 10.1016/j.jmmm.2003.12.550
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999 C 5 |a 10.1103/PhysRevLett.53.2571
|9 -- missing cx lookup --
|2 Crossref
999 C 5 |1 O. K. Andersen
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|t Electronic Structure and Its Applications
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999 C 5 |a 10.1088/0022-3719/5/13/012
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999 C 5 |a 10.1088/0031-8949/32/4/024
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999 C 5 |a 10.1016/0092-640X(85)90016-6
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999 C 5 |a 10.1103/PhysRevB.25.4452
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|2 Crossref
999 C 5 |a 10.1103/PhysRevB.40.11561
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|2 Crossref


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