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000046698 084__ $$2WoS$$aChemistry, Physical
000046698 084__ $$2WoS$$aPhysics, Condensed Matter
000046698 1001_ $$0P:(DE-HGF)0$$aHeidelberg, A.$$b0
000046698 245__ $$aLocalized Electrochemical Oxidation of Thin Nb Films in Microscopic and Nanoscopic Dimensions
000046698 260__ $$aAmsterdam$$bElsevier$$c2005
000046698 300__ $$a173 - 180
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000046698 440_0 $$05673$$aSurface Science$$v597$$x0039-6028
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000046698 520__ $$aThe mechanism and kinetics of localized anodic oxidation of thin Nb films are investigated by measurements in an electrochemical microcell and in the so-called nanocell, which is formed by water condensation between an AFM-tip and the Nb-substrate in humid air. In both, the microscopic and nanoscopic oxidation, the thickness of generated oxide structures increases linearly with the applied potential in accordance with the so-called high field growth model. The oxide growth factor depends on the polarization time and reaches in both cases for long times a value of about 2.8 nm/V. In the case of AFM tip-induced oxidation at constant voltage the oxide growth rate decreases rapidly with the polarization time, which is in good agreement with the proposed models including a rapid build-up of space charge within the oxide in the initial oxidation stages. The increase of the oxide thickness is limited by the thickness of the thin Nb layer. An experimental procedure for checking the complete local nanooxidation of thin Nb films is proposed and the possibility for preparation of lateral metal-insulator-metal (MIM) structures is demonstrated. (c) 2005 Elsevier B.V. All rights reserved.
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000046698 65320 $$2Author$$aanodic oxidation
000046698 65320 $$2Author$$aAFM
000046698 65320 $$2Author$$ananostructuring
000046698 65320 $$2Author$$athin films
000046698 65320 $$2Author$$aniobium
000046698 7001_ $$0P:(DE-HGF)0$$aRozenkranz, C.$$b1
000046698 7001_ $$0P:(DE-HGF)0$$aSchultze, J. W.$$b2
000046698 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, T.$$b3$$uFZJ
000046698 7001_ $$0P:(DE-Juel1)VDB13645$$aStaikov, G.$$b4$$uFZJ
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000046698 8567_ $$uhttp://dx.doi.org/10.1016/j.susc.2004.10.056
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000046698 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x1
000046698 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
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