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@ARTICLE{Heidelberg:46698,
      author       = {Heidelberg, A. and Rozenkranz, C. and Schultze, J. W. and
                      Schäpers, T. and Staikov, G.},
      title        = {{L}ocalized {E}lectrochemical {O}xidation of {T}hin {N}b
                      {F}ilms in {M}icroscopic and {N}anoscopic {D}imensions},
      journal      = {Surface science},
      volume       = {597},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-46698},
      pages        = {173 - 180},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The mechanism and kinetics of localized anodic oxidation of
                      thin Nb films are investigated by measurements in an
                      electrochemical microcell and in the so-called nanocell,
                      which is formed by water condensation between an AFM-tip and
                      the Nb-substrate in humid air. In both, the microscopic and
                      nanoscopic oxidation, the thickness of generated oxide
                      structures increases linearly with the applied potential in
                      accordance with the so-called high field growth model. The
                      oxide growth factor depends on the polarization time and
                      reaches in both cases for long times a value of about 2.8
                      nm/V. In the case of AFM tip-induced oxidation at constant
                      voltage the oxide growth rate decreases rapidly with the
                      polarization time, which is in good agreement with the
                      proposed models including a rapid build-up of space charge
                      within the oxide in the initial oxidation stages. The
                      increase of the oxide thickness is limited by the thickness
                      of the thin Nb layer. An experimental procedure for checking
                      the complete local nanooxidation of thin Nb films is
                      proposed and the possibility for preparation of lateral
                      metal-insulator-metal (MIM) structures is demonstrated. (c)
                      2005 Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-1 / ISG-3 / CNI},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB41 / I:(DE-Juel1)VDB43 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000233788600017},
      doi          = {10.1016/j.susc.2004.10.056},
      url          = {https://juser.fz-juelich.de/record/46698},
}