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000046890 0247_ $$2DOI$$a10.1016/j.susc.2005.05.022
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000046890 084__ $$2WoS$$aChemistry, Physical
000046890 084__ $$2WoS$$aPhysics, Condensed Matter
000046890 1001_ $$0P:(DE-Juel1)VDB32659$$aAsaoka, H.$$b0$$uFZJ
000046890 245__ $$aSize of small Si and Ge Clusters on Si(111) and Ge(111) Surfaces
000046890 260__ $$aAmsterdam$$bElsevier$$c2005
000046890 300__ $$a19
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000046890 440_0 $$05673$$aSurface Science$$v588$$x0039-6028
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000046890 520__ $$aWe determined the average size of small Si and Ge clusters confined to one half of a (7 x 7) or (5 x 5) unit cell of a Si or Ge(111) surface. The growth conditions were chosen in order to produce clusters with the size close to their maximal size. The size of Si and Ge clusters confined to a Si(111)-(7 x 7) half unit cell was determined to be 8.3 +/- 1 atoms and 7.5 +/- 1 atoms, respectively for a growth temperature of 400 K. This is the same value within the error and shows that the material of the clusters is less important for the cluster size. On the Ge surface it was found that the reconstruction unit cell is important for the cluster size. On the (5 x 5) reconstructed Ge(I 11) surface the Si clusters have a smaller size of 4.7 +/- 1 atoms compared to 8.2 +/- 1 atoms on the Ge(111)-(7 x 7) surface. (c) 2005 Elsevier B.V. All rights reserved.
000046890 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000046890 65320 $$2Author$$ascanning tunneling microscopy
000046890 65320 $$2Author$$amolecular beam epitaxy
000046890 65320 $$2Author$$asurface reconstruction
000046890 65320 $$2Author$$aself-assembly
000046890 65320 $$2Author$$aclusters
000046890 65320 $$2Author$$asilicon
000046890 65320 $$2Author$$agermanium
000046890 7001_ $$0P:(DE-Juel1)VDB10516$$aCherepanov, V.$$b1$$uFZJ
000046890 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b2$$uFZJ
000046890 773__ $$0PERI:(DE-600)1479030-0$$a10.1016/j.susc.2005.05.022$$gVol. 588, p. 19$$p19$$q588<19$$tSurface science$$v588$$x0039-6028$$y2005
000046890 8567_ $$uhttp://dx.doi.org/10.1016/j.susc.2005.05.022
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000046890 9141_ $$y2005
000046890 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000046890 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
000046890 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
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