TY  - JOUR
AU  - Asaoka, H.
AU  - Cherepanov, V.
AU  - Voigtländer, B.
TI  - Size of small Si and Ge Clusters on Si(111) and Ge(111) Surfaces
JO  - Surface science
VL  - 588
SN  - 0039-6028
CY  - Amsterdam
PB  - Elsevier
M1  - PreJuSER-46890
SP  - 19
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
AB  - We determined the average size of small Si and Ge clusters confined to one half of a (7 x 7) or (5 x 5) unit cell of a Si or Ge(111) surface. The growth conditions were chosen in order to produce clusters with the size close to their maximal size. The size of Si and Ge clusters confined to a Si(111)-(7 x 7) half unit cell was determined to be 8.3 +/- 1 atoms and 7.5 +/- 1 atoms, respectively for a growth temperature of 400 K. This is the same value within the error and shows that the material of the clusters is less important for the cluster size. On the Ge surface it was found that the reconstruction unit cell is important for the cluster size. On the (5 x 5) reconstructed Ge(I 11) surface the Si clusters have a smaller size of 4.7 +/- 1 atoms compared to 8.2 +/- 1 atoms on the Ge(111)-(7 x 7) surface. (c) 2005 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000231006900008
DO  - DOI:10.1016/j.susc.2005.05.022
UR  - https://juser.fz-juelich.de/record/46890
ER  -