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@ARTICLE{Gubin:47039,
      author       = {Gubin, A. I. and Il'in, K. S. and Vitusevich, S. A. and
                      Siegel, M. and Klein, N.},
      title        = {{D}ependence of magnetic penetration depth on the thickness
                      of superconducting {N}b thin film},
      journal      = {Physical review / B},
      volume       = {72},
      number       = {6},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-47039},
      pages        = {064503},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {In this paper we present the results of a systematic study
                      on the magnetic field penetration depth of superconducting
                      niobium thin films. The films of thicknesses ranging from 8
                      to 300 nm were deposited on a Si substrate by dc magnetron
                      sputtering. The values of the penetration depth lambda(0)
                      were obtained from the measurements of the effective
                      microwave surface impedance by employing a sapphire
                      resonator technique. Additionally, for the films of
                      thickness smaller than 20 nm, the absolute values of
                      lambda(0) were determined by a microwave transmission
                      method. We found that the reduction of the film thickness
                      below 50 nm leads to a significant increase of the magnetic
                      field penetration depth from about 80 nm for 300 nm thick
                      film up to 230 nm for a 8 nm thick film. The dependence of
                      the penetration depth on film thickness is described well by
                      taking into account the experimental dependences of the
                      critical temperature and residual resistivity on the
                      thickness of the niobium films. Structural disordering of
                      the films and suppression of superconductivity due to the
                      proximity effect are considered as mechanisms responsible
                      for the increase of the penetration depth in ultrathin
                      films.},
      keywords     = {J (WoSType)},
      cin          = {ISG-2 / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB42 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000231564400126},
      doi          = {10.1103/PhysRevB.72.064503},
      url          = {https://juser.fz-juelich.de/record/47039},
}